US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Sensing circuit of memory device and control method of sensing circuit" (Canadian Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,004, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Sensing circuit of memory device and control method of sensing circuit" was invented by Atul Katoch (Ottawa) and Sergiy Romanovskyy (Ottawa).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sensing circuit and a control method of the sensing circuit are provided. The sensing circuit includes a data line, a complementary data line, a read bit line, a complementary read bit line, a read pass gate circuit and logic circuit. The logic circuit enables the read pass gate circuit when a voltage level on the read bit line and a voltage level on the complem...