US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor structure with nitrided inner spacers and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,679, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with nitrided inner spacers and method for manufacturing the same" was invented by Man-Nung Su (Hsinchu, Taiwan) and I-Hsuan Lo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a channel structure, a gate structure, two source/drain features, and a plurality of inner spacers. The channel structure includes a plurality of channel features which are spaced apart from each other. The gate structure is disposed to surround the channel features. The source/drain features are ...