US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device structure with conductive via structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,944, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with conductive via structure and method for forming the same" was invented by Kuo-Chiang Tsai (Hsinchu City, Taiwan), Jeng-Ya Yeh (New Taipei City, Taiwan) and Mu-Chi Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a conductive structure. The method includes forming a first dielectric layer over the conductive structure. The method includes forming a conductive via structure that passes through...