ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,960, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Metal-insulator-silicide capacitors" was invented by Kaochao Chen (Hsinchu City, Taiwan), Chia-Cheng Ho (Hsinchu City, Taiwan) and Chan-Yu Hung (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated circuit including a semiconductor substrate. A silicide structure is disposed over the semiconductor substrate in a cross-sectional view. A dielectric structure is in direct contact with an upper surface of the silicide structure in the cross-sectional view. A metal structure is in direct contact wi...