US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Large dimension metal gate field-effect transistor (FET) with metal gate dummy structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,689, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Large dimension metal gate field-effect transistor (FET) with metal gate dummy structures" was invented by Yu-Chen Chang (Taoyuan, Taiwan), Anhao Cheng (Taichung, Taiwan), Meng-I Kang (Changhua County, Taiwan) and Yen-Liang Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with some aspects of the disclosure, a semiconductor structure is provided. The semiconductor structure includes: an active region; and a gate stack disposed on the active region. The gate stack includes: at least one gate dielectric layer disposed...