US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Field effect transistor with gate electrode having multiple gate lengths" (Taiwanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,687, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with gate electrode having multiple gate lengths" was invented by Pei-Yu Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a semiconductor nanostructure transistor. The semiconductor nanostructure transistor includes a plurality of semiconductor nanostructures corresponding to channel regions conductor Nanostructure transistor. A gate metal surrounds the semiconductor nanostructures. The gate metal has differing gate length dimension above the semiconductor nanostructures co...