US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Transistor gate isolation structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,191, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate isolation structures and methods of forming the same" was invented by Li-Fong Lin (Hsinchu, Taiwan), Wen-Kai Lin (Yilan County, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor gate isolation structures and methods of forming the same are provided. In an embodiment, a device includes: an isolation region; a first gate structure on the isolation region; a second gate structure on the isolation region; and a gate isolation structure between the first gat...