US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Stacked transistors having isolation layers between epitaxial structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,192, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked transistors having isolation layers between epitaxial structures" was invented by Mrunal Abhijith Khaderbad (Hsinchu City, Taiwan), Dhanyakumar Mahaveer Sathaiya (Hsinchu, Taiwan), Huicheng Chang (Tainan City, Taiwan), Ko-Feng Chen (Hsinchu City, Taiwan) and Keng-Chu Lin (Ping-Tung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to a structure including isolation structures between source/drain (S/D) epitaxial structures of stacked transistor structures and a method for fabricating the structure. The...