US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Semiconductor device with air-void in spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,190, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with air-void in spacer" was invented by Gulbagh Singh (Tainan City, Taiwan), Kun-Tsang Chuang (Miaoli City, Taiwan) and Hsin-Chi Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate oxide layer formed on the substrate, a gate formed on the gate oxide layer, and a spacer formed adjacent the gate and over the substrate. The spacer includes a void filled with air to prevent leakage of charge to and from the gate, thereby reducing data loss and providing better...