US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 2 for "Memory circuit and method of operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,550, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory circuit and method of operating the same" was invented by Yun-Feng Kao (Hsinchu, Taiwan) and Katherine H. Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a first memory cell array configured to store data, and a second memory cell array. The second memory cell array is configured as a first logic circuit or a second logic circuit in response to a first set of control signals. The first logic circuit is configured to perform a first logic function on a first set of data signals based on a se...