US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Gain cell memory device using enhanced sensing scheme and methods for operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,551, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gain cell memory device using enhanced sensing scheme and methods for operating the same" was invented by Wei Ting Hsieh (Hsinchu, Taiwan), Kuen-Yi Chen (Hsinchu City, Taiwan), Yu-Wei Ting (Taipei City, Taiwan), Yi Ching Ong (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gain cell memory includes a write transistor located on a substrate; a read transistor located on the substrate; a capacitor having a first electrode, a node dielectric, and a second electrode, wherein the first electrode...