US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Structure for metal gate electrode and method of fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,285, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Structure for metal gate electrode and method of fabrication" was invented by Ru-Shang Hsiao (Jhubei City, Taiwan), Ching-Hwanq Su (Tainan City, Taiwan), Pohan Kung (Hsinchu, Taiwan), Ying Hsin Lu (Hsinchu, Taiwan) and I-Shan Huang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-m...