US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Stacked multi-gate device with low contact via resistance and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,325, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stacked multi-gate device with low contact via resistance and methods for forming the same" was invented by Yuting Cheng (Taoyuan City, Taiwan), Tzu Pei Chen (Taipei City, Taiwan), Kuan-Kan Hu (Hsinchu, Taiwan), Shao-An Wang (Hsinchu County, Taiwan), Jung-Hao Chang (Taichung City, Taiwan) and Sung-Li Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that has two transistors and a source/drain contact. The first transistor has a layer of semiconductor material that acts as a channel, a structure ...