US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Semiconductor device structure and methods of forming the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,289, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Po-Chin Chang (Taichung, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Yuting Cheng (Taoyuan, Taiwan), Sung-Li Wang (Hsinchu, Taiwan) and Pinyen Lin (Rochester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed in a PFET region and a second source/drain region dispose...