US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Semiconductor device and methods of formation" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,262, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of formation" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Shahaji B. More (Hsinchu City, Taiwan), Chi-Yu Chou (Zhubei City, Taiwan) and Yueh-Ching Pai (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide a semiconductor device having an oxide-filled barrier structure between structures of gate-all-around transistors included in the semiconductor device. The use of the oxide-filled barrier structure may reduce a distance separating nanosheet s...