US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Semiconductor device and method of forming the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,654,979, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Hengyuan Lee (Hsinchu County, Taiwan) and Xinyu Bao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductive layer, a memory layer, a second conductive layer and a selector layer. The memory layer surrounds the first conductive layer. The second conductive layer is disposed aside the memory layer. The selector layer is disposed on the second conductive layer. A first side of the second conductive layer is covered by the me...