US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Profile control of epitaxial structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,266, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Profile control of epitaxial structures in semiconductor devices" was invented by Shahaji B. More (Hsinchu, Taiwan) and Yi Hsuan Lo (Yunlin, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a first FET, and a second FET. The first FET includes first and second fin structures disposed on first and second fin bases, respectively, a first S/D region disposed on the first and second fin bases and in contact wit...