ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,671, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method of manufacturing EUV photo masks" was invented by Hsin-Chang Lee (Hsinchu, Taiwan), Pei-Cheng Hsu (Hsinchu, Taiwan), Ta-Cheng Lien (Hsinchu, Taiwan) and Tzu Yi Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the ba...