US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Method of forming semiconductor device with silicide layer with different silicide phases or different thicknesses" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,263, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming semiconductor device with silicide layer with different silicide phases or different thicknesses" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Yi-Hsien Chen (Hsinchu County, Taiwan), Chi Huang (Changhua County, Taiwan), Chih-Pin Tsao (Hsinchu County, Taiwan), Chun-Sheng Liang (Changhua County, Taiwan) and Chih-Hao Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes the following steps. A substrate is patterned to form a fin structure. The fin struc...