US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Method for forming a crystalline protective polysilicon layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,298, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming a crystalline protective polysilicon layer" was invented by Cheng-Hung Wang (Hsin-Chu, Taiwan), Tsung-Lin Lee (Hsin-Chu, Taiwan), Wen-Chih Chiang (Hsin-Chu, Taiwan) and Kuan-Jung Chen (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: deposit...