US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,293, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structure" was invented by Po-Ting Lin (Taichung City, Taiwan), Yu-Ming Hsiang (New Taipei City, Taiwan), Wei-Chih Wen (Hsinchu County, Taiwan), Yin-Hao Wu (Taichung City, Taiwan), Wu-Wei Tsai (Taoyuan City, Taiwan), Hai-Ching Chen (Hsinchu City, Taiwan), Yu-Ming Lin (Hsinchu City, Taiwan) and Chung-Te Lin (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory...