US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "High-k isolation of fin structures" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,533, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"High-k isolation of fin structures" was invented by Kang Huang (Hsinchu, Taiwan), Deng-Ming Juo (Tainan City, Taiwan), Wan-Chun Pan (Hsinchu, Taiwan) and Shich-Chang Suen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming fin structures separated by an isolation material; depositing a high-k material over the fin structures and isolation material, wherein the high-k material includes lower portions located between fin ...