US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Edge fill for stacked structure" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,647, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Edge fill for stacked structure" was invented by Su-Chun Yang (Hsinchu, Taiwan), Jui Hsuan Tsai (Taipei, Taiwan), Chiao-Chun Chang (Hsinchu, Taiwan), Chu-Chuan Huang (Hsinchu, Taiwan), Jih-Churng Twu (Hsinchu, Taiwan) and Chung-Shi Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A process includes depositing an edge fill dielectric over a first workpiece and a device disposed thereon. The edge fill dielectric is patterned so that only the edge portions remain. A second dielectric material is formed over the first workpiece, dev...