ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,343, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Dummy vertical transistor structure to reduce cross talk in pixel sensor" was invented by Tsun-Kai Tsao (Tainan City, Taiwan), Jiech-Fun Lu (Madou Township, Taiwan) and Shih-Pei Chou (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector in a substrate. A first vertical gate electrode is formed extending into a first surface of the substrate. The first vertical gate electrode is adjacent ...