US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Phase change material radio-frequency device and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,603, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase change material radio-frequency device and methods for forming the same" was invented by Hung-Ju Li (Hsinchu City, Taiwan), Chien Ta Huang (Taoyuan, Taiwan), Kuo-Pin Chang (Zhubei City, Taiwan), Yu-Wei Ting (Taipei City, Taiwan) and Kuo-Ching Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heater material layer is over a substrate. A reactive sputtering process is performed while the substrate and the heater material layer are placed in a process chamber. Sputtered aluminum atoms and reactive nitrogen-containing mo...