US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Parasitic resistance and capacitance extraction methods and non-transitory computer-readable media thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,627, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Parasitic resistance and capacitance extraction methods and non-transitory computer-readable media thereof" was invented by Chin-Shen Lin (Taipei City, Taiwan), Wan-Yu Lo (Taoyuan County, Taiwan), Kuo-Nan Yang (Hsinchu City, Taiwan) and Chung-Hsing Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides methods and a non-transitory computer readable media for resistance and capacitance (RC) extraction. The method comprises: receiving an electronic layout; selecting a two-dimensional (2D) conduc...