US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,186, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device" was invented by Cheng Hung Lee (Hsinchu, Taiwan), Chien-Yu Huang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Yen-Chi Chou (Hsinchu, Taiwan), Shao Hsuan Hsu (Hsinchu, Taiwan) and Tzu-Chun Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a substrate with a front side and a back side opposite the front side. An interconnect structure is situated on or over the substrate and has first and second metal layers and a via electrically connecting the first and second metal layers. A word lin...