US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Memory circuits, memory structures, and methods for fabricating a memory device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,181, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory circuits, memory structures, and methods for fabricating a memory device" was invented by Chieh Lee (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan), Wen-Chang Cheng (Richmond, Texas) and Jonathan Tsung-Yung Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a first memory array having bit lines; a second memory array having bit lines; a first sense amplifier connected to a first bit line of the first memory array and a first bit line of the second memor...