ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,513, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Work-function metal in transistors and method forming same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Chun-Da Liao (Taipei City, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan), Yan-Ming Tsai (Toufen Township, Taiwan), Harry Chien (Chandler, Ariz.), Huang-Lin Chao (Hillsboro, Ore.), Weng Chang (Hsinchu, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan), Ming-Hsing Tsai (Chu-Pei City, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack over a semiconductor region, forming a so...