US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Volume-less fluorine incorporation method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,511, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Volume-less fluorine incorporation method" was invented by Hsueh-Ju Chen (Taipei City, Taiwan), Chi On Chui (Hsinchu, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan), Pei Ying Lai (Hsinchu, Taiwan) and Chia-Wei Hsu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes removing a dummy gate stack to form a trench between gate spacers, depositing a gate dielectric extending into the trench, and performing a first treatment process on the gate dielectric. The first treatment process is performed using a fluorine-containing gas...