US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Supportive layer in source/drains of FinFET devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,503, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Supportive layer in source/drains of FinFET devices" was invented by Jung-Chi Tai (Tainan, Taiwan), Chii-Horng Li (Zhubei, Taiwan), Pei-Ren Jeng (Chu-Bei, Taiwan), Yen-Ru Lee (Hsinchu, Taiwan), Yan-Ting Lin (Baoshan Township, Taiwan) and Chih-Yun Chin (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer...