US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Structure and formation method of semiconductor device with photodetector" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,573, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with photodetector" was invented by Chen-Hao Chiang (Taoyuan City, Taiwan), Li-Weng Chang (New Taipei City, Taiwan) and Jiun-Yi Wu (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method are provided. The method includes forming a p-type doped region and an n-type doped region in a semiconductor substrate. The method also includes partially removing the semiconductor substrate to form a recess exposing portions of the p-type ...