US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Source/drain contacts and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,515, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Source/drain contacts and methods for forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a source/drain feature over a substrate; a metal gate structure extending lengthwise along a first direction and adjacent to the source/drain feature; a gate isolation structure extending lengthwise along a second direction ...