US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,471, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Chun-Yi Chang (Taoyuan City, Taiwan), Chia-Hui Lin (Taichung City, Taiwan), Tai-Chun Huang (Hsin-Chu City, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a metal gate structure and an isolation structure adjacent to the metal gate structure. The isolation structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer and a third dielectric layer over the s...