US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device with dielectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,531, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with dielectric layer and method of forming the same" was invented by Cheng-I Lin (Hsinchu, Taiwan), Ming-Ho Lin (Taipei, Taiwan), Da-Yuan Lee (Jhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first layer over a semiconductor fin and forming a second layer over the first layer. The first layer is a first material and the second layer is a second material different from the first layer. The second layer is thicker on a t...