US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,512, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Lo-Heng Chang (Hsinchu, Taiwan), Yu-Xuan Huang (Hsinchu City, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming first semiconductor layers vertically stacked over a substrate; forming a gate structure over the first semiconductor layers; etching portions of the first semiconductor layers and the substrate uncovered by the substrate...