US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Resistive memory device with enhanced local electric field and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,690, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory device with enhanced local electric field and methods of forming the same" was invented by Hung-Li Chiang (Taipei City, Taiwan), Jung-Piao Chiu (Kaohsiung City, Taiwan), Jer-Fu Wang (Taipei City, Taiwan), Tzu-Chiang Chen (Hsinchu City, Taiwan) and Meng-Fan Chang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes a bottom electrode, a switching layer including a first horizontal portion, a second horizontal portion over an upper surface of the bottom electrode, and a first verti...