US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Memory device including a semiconducting metal oxide FIN transistor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,460, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device including a semiconducting metal oxide FIN transistor and methods of forming the same" was invented by Yong-Jie Wu (Hsinchu, Taiwan), Yen-Chung Ho (Hsinchu, Taiwan), Hui-Hsien Wei (Taoyuan City, Taiwan), Chia-Jung Yu (Hsinchu, Taiwan), Pin-Cheng Hsu (Zhubei City, Taiwan), Mauricio Manfrini (Zhubei City, Taiwan) and Chung-Te Lin (Taiwan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconducting metal oxide fin located over a lower-level dielectric material layer, a gate dielectric laye...