US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Liner layer along absorption structure of IR sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,560, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Liner layer along absorption structure of IR sensor" was invented by Po-Chun Liu (Hsinchu City, Taiwan), Yi-Shin Chu (Hsinchu City, Taiwan) and Sin-Yi Jiang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising a first semiconductor material and a recess in a top surface of the substrate. An absorption structure is disposed within the recess and comprising a second semiconductor material different from the first sem...