ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,463, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit with thin film resister structure" was invented by Chun-Tsung Kuo (Tainan, Taiwan) and Ming Chyi Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabrication method includes: forming, over a first dielectric layer between a first metal portion and a second metal portion, a thin film resistor (TFR); forming openings in the first dielectric layer over the first metal portion and the second metal portion; and forming a first bond pad in an opening over the first metal portion and a second bond pad in an ope...