US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Field effect transistor having segmented channel region" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,475, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor having segmented channel region" was invented by Wen-Yi Lin (Tainan, Taiwan), Shi-Sheng Hu (Tainan, Taiwan) and Chao-Chi Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Field effect transistor (FET) devices having a heterogeneous/segmented channel region and methods for fabricating the same are provided. In one example, a fin-like field effect transistor (FinFET) device includes a substrate, a fin structure disposed on the substrate, a segmented channel region formed in the fin structure, two source/drai...