US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Dielectric densification" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,696, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Dielectric densification" was invented by Cheng-Ming Lin (Kaohsiung City, Taiwan), Szu-Hua Chen (Tainan City, Taiwan), Kenichi Sano (Hsinchu, Taiwan), Wei-Yen Woon (Taoyuan City, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A low thermal budget dielectric material treatment is provided. An example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carrie...