US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Backside refraction layer for backside illuminated image sensor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,565, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Backside refraction layer for backside illuminated image sensor and methods of forming the same" was invented by Po-Han Chen (Hsinchu, Taiwan), Kuo-Cheng Lee (Tainan City, Taiwan) and Fu-Cheng Chang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Photosensors may be formed on a front side of a semiconductor substrate. An optical refraction layer having a first refractive index may be formed on a backside of the semiconductor substrate. A grid structure including openings is formed over the optical refraction layer. A masking ma...