US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Structure and formation method of semiconductor device with semiconductor nanostructures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,216, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure and formation method of semiconductor device with semiconductor nanostructures" was invented by Ta-Chun Lin (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method are provided. The method includes forming a fin structure over a substrate, and the fin structure has multiple sacrificial layers and multiple semiconductor layers laid out in an alternating manner. The method also includes forming a dummy gate stack...