US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Raised source/drain oxide semiconducting thin film transistor and methods of making the same" (Belgian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,233, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Raised source/drain oxide semiconducting thin film transistor and methods of making the same" was invented by Gerben Doornbos (Kessel-Lo, Belgium), Blandine Duriez (Brussels) and Marcus Johannes Henricus van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor, integrated semiconductor device and methods of making. The transistor includes a patterned gate electrode, a dielectric layer located over the patterned gate electrode and a patterned first oxide semiconductor layer comprising a channel region and source/drain re...