US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,976, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device" was invented by Ryota Watanabe (Yokohama, Japan) and Hidemitsu Kojima (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first memory column, a memory array and a sign decoder. The first memory column is configured to store first sign bits. The memory array is configured to store a first data array and generate bit line signals. The sign decoder is configured to output data signals according to the first sign bits and the bit line signals. The data signals correspond to a second data array...