US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Field effect transistor with isolation structure and related method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,265, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with isolation structure and related method" was invented by Shih-Chi Fu (Hsinchu, Taiwan), Chih-Hsiung Peng (Hsinchu, Taiwan), Kuei-Shun Chen (Hsinchu, Taiwan) and Te-Yu Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a first stack of semiconductor channels and a second stack of semiconductor channels over a substrate, the first stack being adjacent the second stack, a transition region overlapping neighboring protruding corners of the first stack and the second stack; formin...