US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Field effect transistor with gate isolation structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,215, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with gate isolation structure and method" was invented by Kuo-Cheng Chiang (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Jung-Chien Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first vertical stack of first nanostructures formed over a substrate, a second vertical stack of second nanostructures adjacent to the first vertical stack, and a first gate structure adjacent the first nanostructures. The first gate ...