US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Embedded semiconductor region for a latch-up susceptibility improvement" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,266, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Embedded semiconductor region for a latch-up susceptibility improvement" was invented by Chien Yao Huang (Taipei, Taiwan) and Yu-Ti Su (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a metal-oxide-semiconductor field-effect transistor (MOSFET) device. The MOSFET device includes a first-type substrate, a deep-second-type well in the first-type substrate, a first-type well over the deep-second-type well, and a second-type well over the deep-second-type well. The second-type well and the deep-second-typ...