US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Dipole patterning for CMOS devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,258, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Dipole patterning for CMOS devices" was invented by Lung-Kun Chu (New Taipei City, Taiwan), Mao-Lin Huang (Hsinchu City, Taiwan), Chung-Wei Hsu (Hsinchu, Taiwan), Jia-Ni Yu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second n-type transistors and first and second p-type transistors. The first n-type transistor includes a first channel layer and a first portion of a high-k dielectric layer over the firs...